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High-voltage MOS selection tips

Author: Shenzhen Yuan Zhi Electronics Co., Ltd.Time:2018-03-01 17:15:33Views:1423SML

The high-voltage MOSFET is the research and development and production of BYD Microelectronics Company. According to the market demand, the main products are 500V (5A, 9A), 600V (1A, 2A, 4A, 6A, 8A...
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The high-voltage MOSFET is the research and development and production of BYD Microelectronics Company. According to the market demand, the main products are 500V (5A, 9A), 600V (1A, 2A, 4A, 6A, 8A, 10A and 12A) 220 / TO-220F / TO-251 / TO-92 and other plug-in package, there are TO-252 and other D-PAK package. High voltage MOS uses a very wide range of applications are mainly used in various types of chargers, adapters, PC power, LCD-TV power supply, UPS, high-voltage MOS selection of electronic ballasts and so on, since the product in October 2009 marketing, just six months with a stable quality, excellent service, good prices at home and abroad with the same High-voltage MOS in the industry fierce competition shows a place, and the client made a good reputation.

High-voltage MOSFET components using two basic process technology: one is more traditional planar processes, such as Fairchild QFET UniFET.
The other is a newer charge balance technique. The planar process is very stable and robust, but the high-voltage MOS selection technique has a much higher on-resistance, RDS (on), than charge-balancing techniques such as Fairchild's SuperFET and SupreMOS MOSFETs for the specified active area and breakdown voltage ) Of RDS (on). For high-voltage MOS specification specific RDS (on), the significant difference in the size of the high-voltage MOS selectors active area affects output characteristics and gate charge to other features such as thermal resistance and switching speed of the MOSFET components. Figure 1 shows some of the differences between these three process technologies.

With a typical RDS (on) of 1Ω at a breakdown voltage and size, the new high-voltage MOS shows that RDS (on) for charge-balanced components such as Fairchild's SupreMOS MOSFETs is less than 0.25Ω.
If you just focus on RDS (on), you might mistakenly believe that MOSFET components that are one-fourth the size of traditional components can be used in existing applications. The idea is wrong because when the die size HV MOS selection technique itself is smaller, it has a higher thermal resistance. Therefore, when you realize that the MOSFET is more than just an active area characterized by RDS (on), the above is further validated.

It also has a high-voltage MOS description called "edge terminations" of the edge of the ring area, designed to prevent the occurrence of die edge voltage collapse of the die, leaving the components in the active area collapse.
For smaller MOSFETs, especially for high-voltage components, the edge region may be larger than the active region, as shown in FIG. 2. Although the marginal region does not contribute much to the RDS (on) of the MOSFET, it contributes to the thermal resistance of the junction to the package R J JC. Therefore, having a very small active area at higher RDS does not significantly reduce the overall cost of the MOSFET.

The importance of thermal resistance is manifested in several aspects, including the rated current of the component, as shown in the following table. The three different 600V components listed in the table each have a rated current of 7A, but the RDS (on) values differ greatly from those of the RэJC values. Since the MOSFET's current rating is completely determined by the conduction loss equation, the effect of the reduced thermal resistance is significant.

Therefore, choosing the right part actually depends on how you intend to use the part, what switching frequency you are going to use, what topology and thermal path in the application, and of course the cost you are prepared to accept.

Some common guidelines are advanced planar processes that are better solutions for power factor correction (PFC) and flyback applications without parasitic diode recovery losses if the RDS (on) required to meet the efficiency requirements is greater than 1 Ω Such as UniFET (II), QFET or CFET. This is mainly because the lower RэJC helps keep MOSFET components cooler. For such large RDS (on) requirements, the active area of the charge reflective component accounts for only a small fraction of the total die area due to the edge termination. See Figure 1 and Figure 2. For these applications, planar MOSFETs, even with larger silicon wafers, are less expensive processes, and they cost about the same package.

2018-03-01 1423People browsing

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