FET works
Author: Shenzhen Yuan Zhi Electronics Co., Ltd.Time:2018-03-01 17:01:25Views:799【SML】
Field Effect Transistor (FieldEffect Transistor abbreviation (FET)) title of the FET. By a minority carrier to participate in thermal conductivity, also known as multi-polar junction transistor. It be...
label:
Field Effect Transistor (FieldEffect Transistor abbreviation (FET)) title of the FET. By a minority carrier to participate in thermal conductivity, also known as multi-polar junction transistor. It belongs to the voltage-controlled semi-superconductor device. The
output resistance is high (10 ^ 8 ~ 10 ^ 9Ω), low noise, low power
consumption, large static range, easy integration, no secondary
breakdown phenomenon, wide area and other advantages of the insurance
mission has changed bipolar junction Transistor and power transistor junction of the growing partners.
FET characteristics
1: The FET is a voltage-controlled device that holds the ID (drain-to-source) after VGS (gate-source voltage);
2: FET output DC small, so its output resistance is large.
3: It is the application of minority carrier thermal conductivity, so its measurement of stability is better;
4: The small coefficient of the narrowing path of the narrow
path is smaller than the small coefficient of the small path of the
narrowing path of the triode.
5: FET anti-radiation power;
6: because there is no miscellaneous activities scattered scattered particles caused by young children, because of low noise.
The mission of the FET
In
a word, the principle of field-effect transistor is "the ID of the
channel between the drain and the source passing through the channel,
and the polarity of the reversed-polarity electrode voltage used for the
pn between the electrode and the channel." More precisely, ID
through the circuit amplitude, that is, the cross-sectional area of
the channel, it is the inverse deviation from the pn junction changes
occurred to expand the depletion layer to grasp the reason. In
the non-full sea area of VGS = 0, the transition of the transitional
layer is not large enough. Based on the magnetic field of VDS applied
between the drain and the source, some of the electrons in the source
area are pulled away by the drain, that is, DC to the source ID activities. One of the channels is formed as a blocking type with a moderate ID from the gate to the drain, and the ID is full. This form is called pinch off. This symbolizes that the transitional layer obstructs the channel as a whole, and no direct current is cut off.
In
the transitional layer because there is no electron, the self-moving
hole, is under the state of reality is simply under insulation
characteristics, the general DC is also difficult activity. However,
at this time, the magnetic field between the drain and the source is
actually that the two transitional layers contact the drain and the gate
is near the lower part because the high-speed electrons pulled by the
drift magnetic field pass through the transition layer. Due to the strength of the drift magnetic field simply did not change the full appearance of ID. Second,
VGS shifts to a negative position with VGS = VGS (off), where the
transitional layer generally covers the entire sea area. And
VDS large magnetic field added to the transitional layer, the
electronic pull to the magnetic field drift position, as long as close
to the source of a very short of the whole, which is even more direct
current can not sluggish.
2018-03-01
799People browsing
Mobile website
